| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wiring structure to which, in display devices such as an organic EL display and a liquid crystal display, a semiconductor layer and, for instance, an Al-based film that configures a source electrode and a drain electrode, can be stably and directly connected, and galvanic corrosion is not easily generated between the semiconductor layer and the Al-based film in an electrolyte solution used in a wet process, and the peeling of the Al-based film can be suppressed. <P>SOLUTION: In the wiring structure, the semiconductor layer 4 of a thin film transistor, and the Al alloy film 6 directly connected to the semiconductor layer 4 are formed on a substrate 1 in this order from a substrate 1 side. The semiconductor layer 4 is composed of an oxide semiconductor, and the Al alloy film 6 includes Ni and/or Co. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
