| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device capable of integrating a plurality of processes to one process while forming a plurality of fine memory cells more accurately and a plurality of transistors having a high performance and a method for manufacturing the non-volatile semiconductor storage device. SOLUTION: Films for gate insulating films, films for floating gate electrode films, films for insulating films among gate electrodes, and films for control gate electrode films are laminated on a silicon substrate, films for the control gate electrode films are etched, and the plurality of control gate electrode films having the same width are formed. Each set of an arbitrary number of control gate electrode films is used as a transistor unit, and the insulating films among the gate electrodes, the floating gate electrode films, and the gate insulating films in each transistor unit are formed. Contacts are embedded into contact holes formed along the plurality of control gate electrode films in each transistor unit, and the transistors are formed. COPYRIGHT: (C)2011,JPO&INPIT
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