| 摘要 |
An LED module comprising an LED chip, with an active gallium nitride layer and a silicon platform on which the LED chip is arranged, wherein the silicon platform has two electrodes on the side facing away from the LED chip which are electrically connected to the LED chip and wherein the thickness of the gallium nitride layer of the LED chip is between 2 μm and 10 μm, preferably 1 μm to 5 μm.
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