SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problem that when an SOI substrate is used and a trench element isolation structure is applied, an oxide film at a trench corner part becomes thin during oxidation of a trench sidewall to generate a crystal defect reaching a semiconductor layer in an element region owing to stress concentration. SOLUTION: A semiconductor device includes: the SOI substrate 201; a plurality of grooves 205 penetrating a substrate surface part in an element isolation region of the SOI substrate 201 to reach a first insulating layer 204; an oxide film layer 219 formed by oxidizing a side face of the groove 205 and a fourth insulating layer 220 covering the oxide film layer 219; a buried layer 211 formed inside the groove 205 via the oxide film layer 219 and insulating layer 220; and a third insulating layer 212 covering the buried layer and also covering the plurality of grooves 205 and an element isolation region including other regions other than an element formation region. COPYRIGHT: (C)2011,JPO&INPIT