| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for erasing a NAND flash memory, which prevents an influence on the memory cells of word lines adjacent to word lines subjected to data erasure and simultaneously erases data in the memory cells of at least one word lines in a short period. <P>SOLUTION: When a voltage for erasing the data in the respective memory cells connected to the one or more mutually adjacent word lines being the word lines subjected to the erasure is applied to the word lines subjected to the erasure, a predetermined voltage for half erasure is applied to the adjacent word lines so that the respective memory cells connected to the word lines adjacent to the word lines subjected to the erasure has threshold voltage distribution in a half erasure state which has a maximum threshold voltage which is higher than a threshold voltage distribution in a complete erasure state and lower than the maximum threshold voltage of threshold voltage distribution of predetermined write data higher than the threshold voltage distribution in the complete erasure state. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
