SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target suitable for forming a barrier layer of a Cu wiring used in a semiconductor element etc., and the sputtering target. SOLUTION: The method for manufacturing a sputtering target comprises: a step of refining a high-purity Ta ingot by melting a crude metal Ta with an electron beam; a step of subjecting the resulting high-purity Ta ingot to plastic working through forging and rolling; and a step of subjecting the plastic-worked high-purity Ta ingot to a heat-treatment. The sputtering target is also provided. COPYRIGHT: (C)2011,JPO&INPIT