| 摘要 |
A solid-state imaging device includes: photoelectric conversion units provided on an imaging face of a semiconductor substrate; a color filter provided on the imaging face; and a light shielding portion provided on the imaging face; wherein photoelectric conversion units are arrayed on the imaging face in a first direction a second direction; and wherein the color filter includes a first filter layer having high light transmissivity regarding a first wavelength band, and a second filter layer having high light transmissivity regarding a second wavelength band, with the first and second filter layers arrayed above the photoelectric conversion units arrayed in the first direction so as to extend in the first direction and be arrayed adjacently in the second direction; and wherein the light shielding portion extends in the first direction between the photoelectric conversion units arrayed in the second direction, between the first filter layer and the second filter layer.
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