| 发明名称 |
TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING |
| 摘要 |
A delta (δ)-doped (10-10)-plane GaN transistor is disclosed. Delta doping can achieve a transistor having at least 10 times higher current density than a conventional (10-10)-plane GaN transistor.
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| 申请公布号 |
US2011057198(A1) |
申请公布日期 |
2011.03.10 |
| 申请号 |
US20100871445 |
申请日期 |
2010.08.30 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
FUJIWARA TETSUYA;KELLER STACIA;MISHRA UMESH K. |
| 分类号 |
H01L29/20;H01L21/338;H01L29/737 |
主分类号 |
H01L29/20 |
| 代理机构 |
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