发明名称 |
ELECTRON BEAM ETCHING DEVICE AND METHOD |
摘要 |
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
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申请公布号 |
US2011056625(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100945135 |
申请日期 |
2010.11.12 |
申请人 |
RUEGER NEAL R;WILLIAMSON MARK J;SANDHU GURTEJ S |
发明人 |
RUEGER NEAL R.;WILLIAMSON MARK J.;SANDHU GURTEJ S. |
分类号 |
C23F1/08;C23C16/00;H01L21/306 |
主分类号 |
C23F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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