发明名称 ELECTRON BEAM ETCHING DEVICE AND METHOD
摘要 Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
申请公布号 US2011056625(A1) 申请公布日期 2011.03.10
申请号 US20100945135 申请日期 2010.11.12
申请人 RUEGER NEAL R;WILLIAMSON MARK J;SANDHU GURTEJ S 发明人 RUEGER NEAL R.;WILLIAMSON MARK J.;SANDHU GURTEJ S.
分类号 C23F1/08;C23C16/00;H01L21/306 主分类号 C23F1/08
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