发明名称 PLASMA CVD APPARATUS, METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR LAYER, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
摘要 As an electrode area of a plasma CVD apparatus is enlarged, influence of the surface standing wave remarkably appears, and there is a problem in that in-plane uniformity of quality and a thickness of a thin film formed over a glass substrate is degraded. Two or more high-frequency electric powers with different frequencies are supplied to an electrode for producing glow discharge plasma in a reaction chamber. With glow discharge plasma produced by supplying the high-frequency electric powers with different frequencies, a semiconductor thin film or an insulating thin film is formed. High-frequency electric powers with different frequencies (different wavelengths), which are superimposed on each other, are applied to an electrode in a plasma CVD apparatus, so that increase in plasma density and uniformity for preventing effect of surface standing wave of plasma are attained.
申请公布号 US2011056435(A1) 申请公布日期 2011.03.10
申请号 US20100946224 申请日期 2010.11.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 C23C16/00 主分类号 C23C16/00
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