| 摘要 |
<p>A semiconductor device and a fabrication method thereof are provided. The semiconductor device comprises: a semiconductor layer on a substrate; an insulation layer on the semiconductor layer; a source (41) and a drain (42) which are in contact with the semiconductor layer, wherein the source (41) has multiple fingers (41A), the drain (42) has multiple fingers (42B), and the multiple fingers (41A) of the source (41) intersect the multiple fingers (42B) of the drain (42); a gate (43) on the insulation layer, which is located between the source (41) and the drain (42), and the gate (43) includes a closed ring structure which encircles the multiple fingers (41A) of the source (41) and the multiple fingers (42B) of the drain (42).</p> |
