| 摘要 |
PURPOSE: A method for forming a metal wire of a CMOS image sensor is provided to improve a dark current property by preventing a blister phenomenon. CONSTITUTION: An interlayer dielectric layer is deposited on a semiconductor substrate. A contact plug is formed after a contact hole is patterned by a photolithography process and an etching process. A first metal layer is formed by successively depositing Ti, Al, and TiN. A first metal wire is formed by the photolithography process and an etching process. An interlayer dielectric layer is deposited between metal wires. A via plug is formed after a via contact hole is patterned by the photolithography process and the etching process.
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