| 摘要 |
Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer (22); a first conductive semiconductor layer (23) on the active layer (22); a second conductive semiconductor layer (21) on the active layer (22) so that the active layer (22) is disposed between the first and second conductive semiconductor layers (23,21); and a photonic crystal structure comprising a first light extraction pattern (40) on the first conductive semiconductor layer (23) having a first period, and second light extraction pattern (70) on the first conductive semiconductor layer (23) having a second period, the first period being greater than »/n, and the second period being identical to or smaller than »/n, where n is a refractive index of the first conductive semiconductor layer (23), and » is a wavelength of light emitted from the active layer (22). |
