| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the degradation of the yield and reliability of the semiconductor device by forming a fence which passes through an interlayer dielectric layer under the edge of a plate. CONSTITUTION: An interlayer dielectric layer(22) is formed on a substrate. A storage node contact plug(25A) passes through the interlayer dielectric layer. The storage node is formed on the storage node contact plug. A dielectric layer and a plate are successively formed on a structure including the storage node contact plug. A fence(25B) passes through the interlayer dielectric layer under the edge of the plate.
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