Semiconductor device including a field effect transistor

摘要

A semiconductor device according to one embodiment of the present invention includes a substrate (11), a compound semiconductor layer (12), a device region (13) of a transistor, a drain electrode (14), a source electrode (15), a source pad (19), a gate electrode (16) and a metal (25). The substrate has a first aperture (23) in a back surface thereof. The compound semiconductor layer (12) is formed on the substrate (11). The device region (13) is formed on the compound semiconductor layer (12). The drain electrode (14) is formed transversely to the device region (13). The source electrode (15) is formed transversely to the device region (13) and with a distance from the drain electrode (14). The source pad (19) is connected to the source electrode (15) and formed on a non-device region surrounding the device region (13) on the compound semiconductor layer (12). The gate electrode (16) is formed between the source electrode (15) and the drain electrode (14), above the first aperture (23) and transversely to the device region (13). The metal (25) is formed on the back surface of the substrate (11), including the first aperture and a second aperture penetrating the substrate (11) and the compound semiconductor layer (12) in such a manner as to expose a part of the source pad (19) from the back surface of the substrate (11).