SEMICONDUCTOR DEVICE USING DOUBLE PATTERNING TECHNOLOGY AND METHOD FOR MANUFACTURING SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to manufacture a high integrated device without investment in equipment by easily forming a fine pattern with a simple photolithography process. CONSTITUTION: A first mask pattern(115) is formed on a semiconductor substrate(100) with a preset space. A capping layer is formed on the side and upper side of the first mask pattern. A combination capping layer(135) ion-combined with the first mask pattern is formed by applying combination energy. A second mask layer(140) made of materials with lower solubility than the solubility of the combination capping layer is formed between the combination capping layers on the first mask. The second mask pattern is formed by removing the upper side of the second mask layer and the combination capping layer with a solvent.