| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with a buried gate is provided to improve the reliability of a device by reducing the attack and loss of a gate insulation layer due to high selectivity in a second etching process. CONSTITUTION: A hard mask film(23) is formed on a substrate(21) defining an active area(22). A trench for a buried gate is formed by etching the substrate using the hard mask film as an etching barrier. A gate insulation layer(25B) is formed along the step of the whole structure including the trench. A conductive layer(26B) for the buried gate filing the trench is formed on the gate insulation layer. The buried gate is formed by etching the conductive layer to remain with a preset depth in the trench.
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