NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile semiconductor memory device and a method for manufacturing the same are provided to consecutively form a memory gate insulating layer, a drain side gate insulating layer, and a source side gate insulating layer, thereby simplifying processes. CONSTITUTION: The first semiconductor layer comprises a pillar expanded in a laminating direction on a substrate. The first charge storing layer(55b) surrounds the pillar. The first conductive layer(51) is laminated on the substrate to surround the first charge storing layer. The second semiconductor layer(57) is expanded in a laminating direction while the second semiconductor layer contacts an upper surface of the pillar. The second charge storing layer(56b) surrounds the second semiconductor layer.