| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the stability of device quality by preventing the instability of a cell threshold voltage due to an implant shadow phenomenon on a cell mat edge. CONSTITUTION: A pad oxide layer(102) and a pad nitride layer(103) are successively formed on a silicon substrate(101) defined with a cell region and a peripheral region. A trench is formed on the cell region and the peripheral region by selectively etching the open silicon substrate. An oxide layer(105) is formed on the surface of the trench by performing an oxidation process on the silicon substrate with the trench. A side well ion implantation process is performed on the trench of the cell region. A device isolation layer is formed by filling the insulation materials in the trench of the cell region and the peripheral region.
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