| 摘要 |
PURPOSE: A method for forming a gap-fill insulation layer of a semiconductor device is provided to improve a flow property and densification of a gap-fill insulation layer by applying a multi stage method for dividing the thickness of the gap-fill insulation layer into the minimum thickness and depositing and thermally processing the gap-fill insulation layer. CONSTITUTION: A plurality of patterns(102) are formed on a semiconductor substrate(101) with a gap. A gap-fill insulation layer is formed on the front of the semiconductor substrate including the pattern. The gap-fill insulation layer is deposited with a chemical vapor deposition method. A gap-fill insulation layer(103B) is densified by thermally processing the semiconductor substrate with the gap-fill insulation layer. The gap-fill insulation layer is deposited and thermally processed in the same equipment.
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