发明名称 |
Method for forming a metal nitride layer |
摘要 |
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented. |
申请公布号 |
EP2293322(A1) |
申请公布日期 |
2011.03.09 |
申请号 |
EP20100186167 |
申请日期 |
2001.06.08 |
申请人 |
GENITECH, INC. |
发明人 |
KOH, WON-YONG;LEE, CHUN-SOO |
分类号 |
C23C16/18;H01L21/205;C23C16/34;C23C16/36;C23C16/40;C23C16/44;C23C16/455;C23C16/50;C23C16/515;H01L21/283;H01L21/285;H01L21/314;H01L21/316;H01L21/3205;H01L21/768;H01L23/522 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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