发明名称 SEMICONDUCTOR NANOWIRES ARRAY AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor nanowire array and a method for manufacturing the same are provided to form a vertically aligned silicon nanowire array in large scale by preventing non-uniform etching of silicon and the defects of nanowire. CONSTITUTION: A method for a semiconductor nanowire array contains the following: A porous metal thin film(40) is formed on one side of a template with a plurality of pores by depositing metal. The template is etched to separate the porous metal thin film. The porous metal thin film is transferred to one side of a silicon substrate. Nanowire(70) is formed using a silicon etching solution etching the silicon substrate.
申请公布号 KR20110024892(A) 申请公布日期 2011.03.09
申请号 KR20090083072 申请日期 2009.09.03
申请人 KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE 发明人 LEE, WOO;KIM, JUNG KIL;KIM, JAE CHEON
分类号 B82B3/00 主分类号 B82B3/00
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