| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent malfunction by blocking noise in reading data. CONSTITUTION: A bit line sense amplifier section(31) is connected to a positive bit line and a negative bit line. The bit line sense amplifier amplifies the data in a memory cell in reading data. A positive local transmission line and a negative local transmission line transmit data. A data transfer unit(32) pulls up or pulls down one of the positive local transmission line and the negative local transmission line. |
