| 摘要 |
The present invention relates to a low temperature process ( 160°C or less) for producing and joining substrates using an intermediate layer comprising indium or gallium, wherein the indium or gallium layer is formed by electrodeposition from an ionic liquid comprising an indium or gallium salt. At least one of the substrates may be glass, resin, plastic, metal, ceramic, semiconductor, glassy carbon, graphite, silica or alumina provided with a surface layer of transition metal, aluminium,thallium, tin, lead, bismuth or alloy thereof.
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