| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser annealing method for providing a crystalline semiconductor film of large crystal particle size as well as the manufacturing method for a semiconductor device which uses it. SOLUTION: At crystallization of a non-crystalized semiconductor film under laser irradiation, the change in shape of the semiconductor film (a protruding part or recessed part) is used intentionally to specify the start point of crystal growth, for larger crystal particle size. An active layer (island-like semiconductor film) is arranged so that at least a channel formation region is accommodated inside one single crystal particle, for improved electric characteristics of a TFT.</p> |
