| 摘要 |
1275589 Semi-conductor devices TELEFUNKEN PATENTVERWERTUNGS GmbH 1 Dec 1969 [2 Dec 4968] 58523/69 Heading H1K During transistor manufacture impurities are diffused into a limited area of a collector region in a semi-conductor body from a layer thereon to form the base -region, the diffusion taking place in an oxidizing atmosphere. The oxide layer so formed is subsequently removed together with the impurity-containing layer, and the process is repeated to form the emitter region. After the emitter diffusion process, however, both layers have apertures formed therein to enable contact to be made to the diffused emitter region. The impurity-containing layer may, for a Si body, be a phosphate or borate glass formed initially over the entire semi-conductor surface and then removed, except where diffusion is to occur, by photoresist method.
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