Selective formation of a compound comprising a semiconductor material and a metal material in a substrate, through a layer of germanium oxide

摘要

The method involves forming a germanium oxide layer (13) on a part of a surface (1a) of a semiconductor material substrate (1), and forming a silicon oxide layer (12) on rest of the surface, where the thickness of the layer is between 3 nanometer and 5 nanometer. A metallic material layer (14) is deposited on the oxide layers. A thermal annealing is realized at the level of the part of the surface at a predetermined temperature for obtaining the reduction of the germanium oxide by the metallic material of the layer (14) and forming a silicide. The metallic material layer is removed.