| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form silicide by reacting metal filled in a via hole with a silicon rich layer. CONSTITUTION: A via hole is formed on a semiconductor substrate with an interlayer insulation layer(200). A silicon rich layer(202) is formed on the side and lower side of the via hole. Metal(204) is filled in the via hole. Silicide is formed by thermally processing the via hole. The silicon rich layer is formed by injecting silicon or soaking SiH4.
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