| 摘要 |
PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to reduce a leakage current by increasing the resistance of a drain region. CONSTITUTION: A gate pattern(405) is formed on a gate insulation layer of a semiconductor substrate. A source region(407S) is formed on the semiconductor substrate of one side of the gate pattern. A drain region is formed on the semiconductor substrate of other side of the gate pattern. A sub wiring(415c) is formed on the upper side of the drain region to be insulated from the drain region.
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