发明名称 |
Photoresist topcoat for a photolithographic process |
摘要 |
A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
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申请公布号 |
US7901868(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20080128171 |
申请日期 |
2008.05.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALLEN ROBERT DAVID;SOORIYAKUMARAN RUTNAM;SUNDBERG LINDA KARIN |
分类号 |
G03F7/09;C08G77/38;G03C1/76;G03F7/11 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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