发明名称 |
CMOS devices with a single work function gate electrode and method of fabrication |
摘要 |
Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby. Further described herein are methods of fabricating a device formed of complementary (pMOS and nMOS) transistors having semiconductor channel regions which have been band gap engineered to achieve a low threshold voltage.
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申请公布号 |
US7902014(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20070649545 |
申请日期 |
2007.01.03 |
申请人 |
INTEL CORPORATION |
发明人 |
DOYLE BRIAN S.;JIN BEEN-YIH;KAVALIEROS JACK T.;DATTA SUMAN;BRASK JUSTIN K.;CHAU ROBERT S. |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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