| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the cell current by obtaining broader channel area by forming the separation area separated from the recess gate area and filling the separation area with the gate electrode material. CONSTITUTION: An element isolation film(140) defining an active area(130) is formed on a semiconductor substrate(100). An active area and an element isolation film are etched to form the recess region. An annealing process is enforced to form an isolation area(170) separated form the recess area.</p> |
