| 摘要 |
<p>PURPOSE: A photosensitive compound and a photosensitive composition including the same are provided to increase melting capability while preventing the loss of a non-exposure region and to improve pattern verticality in a semiconductor photolithographic processing. CONSTITUTION: A photosensitive compound comprises at least one naphthoquinonediazide sulfoxide group within one molecule and at least one C1-8 carboxy group or naphthoquinonediazide sulfonic acid ester compound including C1-8 carboxy groups. The sulfonic acid ester compound is represented by chemical formula (1). In chemical formula (1), R1, R2, and R3 are respectively hydrogen atom, halogen atom, alkyl group of carbon number 1-8, ether group of carbon number 1-8, ester group of carbon number 1-8, alkoxy group of carbon number 1-8, carboxy group of carbon number 1-8, thioether group of carbon number 1-8 or naphthoquinonediazide sulfoxy group(-ODNQ); and R is at least one compound group selected from chemical formulas (1A)-(1L).</p> |
