发明名称 |
Exposure process and photomask set used therein |
摘要 |
An exposure process is described, for defining in a photoresist layer a plurality of first patterns having a first pitch and a second pattern between them that is wider than one first pattern. A first exposure step is conducted to the photoresist layer with a first photomask that has a plurality of the first patterns without a second pattern between them, wherein the first patterns on the first photomask have the first pitch only. A second exposure step is conducted to the photoresist layer with a second photomask that has a third pattern narrower than the second pattern at a position corresponding to the second pattern. The exposure dose of the first or second exposure step alone is not sufficient to define any pattern in the photoresist layer.
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申请公布号 |
US7901872(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20070751177 |
申请日期 |
2007.05.21 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUANG CHIH-HAO;YANG CHIN-CHENG |
分类号 |
G03C5/00;G03F1/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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