| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to reduce the bit line coupling capacitance by increasing the thickness of an insulation layer between the bit line and the storage node. CONSTITUTION: An interlayer insulating film(320) is formed on a semiconductor substrate. A bit line(380) is formed on the interlayer insulating film. An interlayer insulating film is etched to form a bottom electrode contact domain. A first spacer(405) is formed on the sidewall of the bottom electrode contact domain. The first conducting material is formed on the bottom electrode contact domain.
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