| 摘要 |
PURPOSE: A substrate processing apparatus is provided to improve the uniformity of the plasma by improving the plasma density by distributing the plasma in the required area. CONSTITUTION: A chamber(110) implements the process for a substrate(10). An electrostatic chuck(120) absorbs and supports the substrate. A gas supply part(130) supplies the reaction gas to the substrate supported by the electrostatic chuck. A multi antenna(140) forms the inductive magnetic field within the chamber for generating the plasma.
|
