发明名称 Piezoelectric thin film device
摘要 A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)−(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.
申请公布号 US7902730(B2) 申请公布日期 2011.03.08
申请号 US20100771173 申请日期 2010.04.30
申请人 HITACHI CABLE, LTD. 发明人 SHIBATA KENJI;OKA FUMIHITO
分类号 H01L41/083 主分类号 H01L41/083
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