发明名称 Frequency monitoring to detect plasma process abnormality
摘要 Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
申请公布号 US7902991(B2) 申请公布日期 2011.03.08
申请号 US20070682290 申请日期 2007.03.05
申请人 APPLIED MATERIALS, INC. 发明人 PARK BEOM SOO;CHOI SOO YOUNG;WHITE JOHN M.;KIM HONG SOON;HOFFMAN JAMES
分类号 G08B21/00 主分类号 G08B21/00
代理机构 代理人
主权项
地址