COMPOSITION FOR FORMING DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A composition for forming a dielectric layer of a semiconductor device is provided to reduce a film shrinkage rate of an insulating layer in the formation of an insulating film of a semiconductor device and to increase density. CONSTITUTION: A composition for forming a dielectric layer of a semiconductor device comprises 10-40 weight% of perhydropolysilazane represented by chemical formula 1, based on 100.0 parts by weight of perhydropolysilazane, 0.01-5 parts by weight of thermal acid generator and the balance of solvent. In chemical formula 1, n is an integer of 10-450. The average molecular weight of perhydropolysilazane is 500-20,000.