发明名称 |
One-time programmable memory and operating method thereof |
摘要 |
A one-time programmable memory cell is provided, the one-time programmable memory cell comprises: a gate dielectric layer disposed on a well; a gate electrode disposed on the gate dielectric layer; source/drain regions disposed in the well at the sides of the gate electrode, respectively; a first salicide layer disposed on one of the source/drain regions; a capacitive dielectric layer disposed on the gate electrode and the other of the source/drain regions; a first conductive plug disposed on the first salicide layer; and a second conductive plug disposed on the capacitive dielectric layer. The size of the first conductive plug is different form the size of the second conductive plug.
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申请公布号 |
US7903444(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20080146753 |
申请日期 |
2008.06.26 |
申请人 |
LIN CHRONG-JUNG;KING YA-CHIN |
发明人 |
LIN CHRONG-JUNG;KING YA-CHIN |
分类号 |
G11C17/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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