发明名称 Semiconductor memory device, and method of controlling the same
摘要 An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.
申请公布号 US7903487(B2) 申请公布日期 2011.03.08
申请号 US20080201922 申请日期 2008.08.29
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 FUJIOKA SHINYA;KAWAKUBO TOMOHIRO;NISHIMURA KOICHI;SATO KOTOKU
分类号 G11C7/00;G06F1/26;G06F1/32;G11C5/14;G11C11/406;H02M3/07 主分类号 G11C7/00
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