发明名称 Method of manufacturing a thin film transistor array substrate
摘要 In manufacturing a thin film transistor array substrate, a passivation film is formed over the transistors. A first photoresist pattern is formed over the passivation film, with a first portion partially overlying at least one source/drain electrode of each transistor and overlying each pixel electrode region, and with a second portion thicker than the first portion. The passivation film is patterned using the first photoresist pattern as a mask. The first photoresist pattern's first portion is removed to form a second photoresist pattern which protrudes upward around the pixel electrode regions. A transparent conductive film is formed with recesses in the pixel electrode regions. A masking pattern is formed over the transparent film in each pixel electrode region, the masking pattern's top surface being below a top of the transparent film. The transparent film is patterned using the masking pattern as a mask to form the pixel electrodes.
申请公布号 US7902006(B2) 申请公布日期 2011.03.08
申请号 US20090436356 申请日期 2009.05.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM WOONG-KWON;LEE HO-JUN;CHIN HONG-KEE;SONG SANG-HEON;BANG JUNG-SUK;SONG JUN-HO;AHN BYEONG-JAE;YIM BAE-HEUK
分类号 H01L21/00;G02F1/1333;G02F1/1343;H01L21/84 主分类号 H01L21/00
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