发明名称 |
Method of manufacturing a thin film transistor array substrate |
摘要 |
In manufacturing a thin film transistor array substrate, a passivation film is formed over the transistors. A first photoresist pattern is formed over the passivation film, with a first portion partially overlying at least one source/drain electrode of each transistor and overlying each pixel electrode region, and with a second portion thicker than the first portion. The passivation film is patterned using the first photoresist pattern as a mask. The first photoresist pattern's first portion is removed to form a second photoresist pattern which protrudes upward around the pixel electrode regions. A transparent conductive film is formed with recesses in the pixel electrode regions. A masking pattern is formed over the transparent film in each pixel electrode region, the masking pattern's top surface being below a top of the transparent film. The transparent film is patterned using the masking pattern as a mask to form the pixel electrodes. |
申请公布号 |
US7902006(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20090436356 |
申请日期 |
2009.05.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WOONG-KWON;LEE HO-JUN;CHIN HONG-KEE;SONG SANG-HEON;BANG JUNG-SUK;SONG JUN-HO;AHN BYEONG-JAE;YIM BAE-HEUK |
分类号 |
H01L21/00;G02F1/1333;G02F1/1343;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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