发明名称 POSITIVE TYPED PHOTOSENSITIVE COMPOSITION
摘要 PURPOSE: A positive typed photosensitive composition is provided to prevent the damage of a semiconductor caused by a low temperature by performing a crosslinking reaction at a low temperature. CONSTITUTION: A positive typed photosensitive composition comprises polyamide derivatives represented by chemical formula (1). In chemical formula (1), R^1, R^2, R^4 and R^5 are independently divalent - hexavalent aryl group with at least two carbon numbers; R^3 is hydrogen atom or alkenyl group of carbon number 1-10; k is an integer of 10-1000; l is an integer of 1-1000; n and m are respectively an integer of 0-2; and X is hydrogen atom or aryl group of carbon number 2-30.
申请公布号 KR20110023355(A) 申请公布日期 2011.03.08
申请号 KR20090081182 申请日期 2009.08.31
申请人 KOREA KUMHO PETROCHEMICAL CO., LTD. 发明人 PARK, JOO HYEON;CHO, JUNG HWAN;LEE, JIN HAN;SON, KYUNG CHUL
分类号 G03F7/039 主分类号 G03F7/039
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