发明名称 |
Field-effect microelectronic device, capable of forming one or several transistor channels |
摘要 |
The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate as well as at least one improved structure capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.
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申请公布号 |
US7902575(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20090394792 |
申请日期 |
2009.02.27 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ERNST THOMAS;BOREL STEPHAN |
分类号 |
H01L29/66;H01L21/336;H01L29/423;H01L29/786 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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