Solid state image pickup device and operating method thereof

摘要

This invention provides a type of solid-state image pickup device characterized by the fact that for a solid-state image pickup device with a broad dynamic range, it is possible to suppress the dark current than photoelectrons overflowing from the photodiode, as well as its driving method. Plural pixels are integrated in an array configuration on a semiconductor substrate. Each pixel has the following parts: photodiode (CPD), transfer transistor (&phgr;T), floating diffusion (CFD), accumulating capacitive element (CS), accumulating transistor (&phgr;S), and a reset transistor. During the accumulating period of photoelectric charge, voltage (α) over that applied on the semiconductor substrate, or −0.6 V or lower than the voltage applied on the semiconductor substrate, is applied as an OFF potential on the gate electrode of at least one transfer transistor, the accumulating transistor and the reset transistor.