| 摘要 |
A contact plug structure for a checkerboard dynamic random access memory comprises a body portion, two leg portions connected to the body portion and a dielectric block positioned between the two leg portions. Each leg portion is electrically connected to a deep trench capacitor arranged in an S-shape manner with respect to the contact plug structure via a doped region isolated by a shallow trench isolation structure. Preferably, the body portion and the two leg portions can be made of the same conductive material selected from the group consisting of polysilicon, doped polysilicon, tungsten, copper and aluminum, while the dielectric block can be made of material selected from the group consisting of borophosphosilicate glass. Particularly, the contact plug can be prepared by dual-damascene technique. Since the overlapped area between the contact plug structure and a word line can be dramatically decreased, the bit line coupling (BLC) can be effectively reduced.
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