发明名称 LATENCY CIRCUIT FOR GENERATING LATENCY SIGNAL USING 1-DIVISION OR 2-DIVISION METHOD AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
摘要 PURPOSE: A latency circuit for generating latency signal using 1-division or 2-division method and a semiconductor memory device having the same are provided to improve noise feature of a delay duplication circuit by reducing the number of delay unit in a delay duplication circuit. CONSTITUTION: A latency control clock generator(120) generates a signal having a frequency which is formed by dividing an original frequency by m. A latency control clock generator generates at least one latency control clock. The latency signal generating unit(130) generates a latency signal. The latency control clock generator is comprised of a delay locked loop(121), a clock divider(122), a delay locked loop duplicating unit(123), and an internal read command signal generation duplication unit(124). A delay locked loop generates an in-phase signal. A clock divider divides the in-phase signal by 2 The delay locked loop duplication unit generates an output signal which is synchronized with the external clock. The internal read command signal generation duplication unit generates the latency control clock.
申请公布号 KR20110023533(A) 申请公布日期 2011.03.08
申请号 KR20090081485 申请日期 2009.08.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, SANG HYUK;JEONG, BYUNG HOON
分类号 G11C11/4076;G11C7/20;G11C11/407 主分类号 G11C11/4076
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