发明名称 |
Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy |
摘要 |
Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.
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申请公布号 |
US7900342(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20070678427 |
申请日期 |
2007.02.23 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS, B.V. |
发明人 |
FREITAG JAMES M.;PINARBASI MUSTAFA M. |
分类号 |
G11B5/127;H04R31/00 |
主分类号 |
G11B5/127 |
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代理人 |
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地址 |
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