| 摘要 |
A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The implantations can dope a source line area while not doping a bit line contact area, and providing an additional implantation for the bit line contact area, or dope the bit line contact area while not doping the source line area, followed by an additional implantation for the source line area, or dope neither the source line area nor the bit line contact area, followed by additional implantations for the source line area and the bit line contact area.
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