发明名称 |
Semiconductor for use in harsh environments |
摘要 |
A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-based blocking layer may be disposed between the at least two barrier layers.
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申请公布号 |
US7902545(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20080120562 |
申请日期 |
2008.05.14 |
申请人 |
BAKER HUGHES INCORPORATED |
发明人 |
CSUTAK SEBASTIAN |
分类号 |
H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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